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FDP79N15 / FDPF79N15 150V N-Channel MOSFET
UniFET
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
* * * * * 79A, 150V, RDS(on) = 0.03 @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability
April 2007
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDP79N15
79 50 316
FDPF79N15
150 79* 50* 316*
Unit
V A A A V mJ A mJ V/ns
30 1669 79 46.3 4.5 463 3.7 -55 to +150 300 38 0.3
W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FDP79N15
0.27 0.5 62.5
FDPF79N15
3.3 -62.5
Unit
C/W C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP79N15 / FDPF79N15 Rev. B
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP79N15 FDPF79N15
Device
FDP79N15 FDPF79N15
Package
TO-220 TO-220F
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 150V, VGS = 0V VDS = 120V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 39.5A VDS = 40V, ID = 39.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
150 -----3.0 ------
Typ
-0.15 -----0.025 46 2620 730 96 50 200 55 38 56 18 21 ---136 2.1
Max Units
--1 10 100 -100 5.0 0.03 -3410 950 140 112 410 120 85 73 --79 316 1.4 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 75V, ID = 79A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 120V, ID = 79A VGS = 10V
------
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 79A VGS = 0V, IS = 79A dIF/dt =100A/s
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.357mH, IAS = 79A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 79A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP79N15 / FDPF79N15 Rev. B
2
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
2
10
2
10
ID, Drain Current [A]
ID, Drain Current [A]
150 C
10
1
o
10
1
25 C -55 C
* Notes : 1. VDS = 40V 2. 250s Pulse Test
o
o
* Notes : 1. 250s Pulse Test 2. TC = 25 C
o
10
0
10
-1
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.07
RDS(ON) [],Drain-Source On-Resistance
0.05
VGS = 10V
IDR, Reverse Drain Current [A]
0.06
10
2
0.04
10
1
150 C
o
25 C
o
0.03
VGS = 20V
o
* Notes : 1. VGS = 0V 2. 250s Pulse Test
* Note : TJ = 25 C
0.02
0
25
50
75
100
125
150
175
200
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
6000
Ciss = Cgs + Cgd (Cds = shorted)
Figure 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
5000
Coss
Coss = Cds + Cgd Crss = Cgd
10
VDS = 30V VDS = 75V VDS = 120V
Capacitances [pF]
4000
Ciss
8
3000
* Note ; 1. VGS = 0 V
6
2000
4
Crss
1000
2. f = 1 MHz
2
* Note : ID = 79A
0 -1 10
0
10
0
10
1
0
10
20
30
40
50
60
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDP79N15 / FDPF79N15 Rev. B
3
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized)
1.1
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Notes : 1. VGS = 10 V 2. ID = 34.5 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FDP79N15
Figure 9-2. Maximum Safe Operating Area for FDPF79N15
10 s
10
2
100 s 10 ms 100 ms 1 ms
10
2
10 s 100 s 1 ms 10 ms
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
10
1
Operation in This Area is Limited by R DS(on)
DC
ID, Drain Current [A]
10
1
100 ms DC
10
0
10
0
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
* Notes :
10
-1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
10
-2
10
0
10
1
10
2
10
-2
10
0
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
90 80 70
ID, Drain Current [A]
60 50 40 30 20 10 0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
FDP79N15 / FDPF79N15 Rev. B
4
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FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP79N15
D=0.5
ZJC(t), Thermal Response
10
-1
0.2 0.1 0.05
10
-2
PDM t1 t2
0.02 0.01 single pulse
-5 -4 -3 -2
* Notes : 0 1. ZJC(t) = 0.27 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
10
10
10
10
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF79N15
D=0.5
ZJC(t), Thermal Response
10
0
0.2 0.1 0.05
10
-1
PDM t1 t2
0.02 0.01
* Notes : 0 1. ZJC(t) = 3.3 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
FDP79N15 / FDPF79N15 Rev. B
5
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FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP79N15 / FDPF79N15 Rev. B
6
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FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP79N15 / FDPF79N15 Rev. B
7
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
) (45
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
FDP79N15 / FDPF79N15 Rev. B
8
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FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FDP79N15 / FDPF79N15 Rev. B
9
15.87 0.20
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
tm
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PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information Preliminary
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I25
No Identification Needed
Full Production
Obsolete
Not In Production
10 FDP79N15 / FDPF79N15 Rev. B
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